语言选择SGT-MOS
乐瓦微SGT-MOS产品采用了具有电荷平衡功能的屏蔽栅深沟槽（Shield Gate Deep Trench）技术，全面提升了器件的开关特性和导通特性，同时降低了器件的特征导通电阻（ Rdson ）和栅极电荷（Qg），产品具有业内极低的FOM值（Rdson*Qg）。广泛应用于各种高频开关电源，BLDC控制，电池保护等市场。
N/P
VDSS (V)
Package
Configuration
| LW Product Name | Configuration | Package | N/P | VDSS (V) |
ID (A) |
Pd (W) |
VGS (V) |
Vth (Typ) |
Rdson(mΩ) @VGS10V Typ |
Rdson(mΩ) @VGS10V Max |
Rdson(mΩ) @VGS4.5V Typ |
Rdson(mΩ) @VGS4.5V Max |
Rdson(mΩ) @VGS2.5V Typ |
Rdson(mΩ) @VGS2.5V Max |
产品应用 | 规格书 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| *LWS6080AQ | Single | SOT-89 | P | -60 | -5.3 | 3 | ±20 | -1.65 | 60 | 75 | 75 | 100 |  |
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| *LWS6080AS | Single | SOP-8 | P | -60 | -8 | 3 | ±20 | -1.65 | 60 | 75 | 75 | 100 | |
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| *LWS6080AL | Single | SOT23-3L | P | -60 | -3.5 | 1.7 | ±20 | -1.65 | 60 | 80 | 75 | 120 | |
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| LWS6080AT | Single | SOT23-6L | P | -60 | -5 | 3 | ±20 | -1.65 | 60 | 75 | 75 | 100 | |
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| *LWS6080A23 | Single | SOT-223 | P | -60 | -5 | 3 | ±20 | -1.65 | 60 | 75 | 75 | 100 | |
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| *LWS6080A4 | Single | TO-252 | P | -60 | -16 | 32 | ±20 | -1.65 | 60 | 75 | 75 | 100 | |
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| *LWS60110H4 | Single | TO-252 | P | -60 | -12 | 30 | ±20 | -3 | 90 | 110 | |
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| LWS60110AD2 | Single | DFN2*2-6L | P | -60 | -8 | 10 | ±20 | -1.6 | 60 | 80 | 85 | 110 |  |
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| *LWS60110AS | Single | SOP-8 | P | -60 | -4 | 3 | ±20 | -1.6 | 90 | 110 | 110 | 150 | |
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| *LWS60110A4 | Single | TO-252 | P | -60 | -12 | 30 | ±20 | -1.6 | 90 | 110 | 110 | 150 | |
