语言选择SGT-MOS
乐瓦微SGT-MOS产品采用了具有电荷平衡功能的屏蔽栅深沟槽（Shield Gate Deep Trench）技术，全面提升了器件的开关特性和导通特性，同时降低了器件的特征导通电阻（ Rdson ）和栅极电荷（Qg），产品具有业内极低的FOM值（Rdson*Qg）。广泛应用于各种高频开关电源，BLDC控制，电池保护等市场。
N/P
VDSS (V)
Package
Configuration
| LW Product Name | Configuration | Package | N/P | VDSS (V) |
ID (A) |
Pd (W) |
VGS (V) |
Vth (Typ) |
Rdson(mΩ) @VGS10V Typ |
Rdson(mΩ) @VGS10V Max |
Rdson(mΩ) @VGS4.5V Typ |
Rdson(mΩ) @VGS4.5V Max |
Rdson(mΩ) @VGS2.5V Typ |
Rdson(mΩ) @VGS2.5V Max |
产品应用 | 规格书 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| LWT1H407HD5 | Single | PDFN5*6-8L | N | 135 | 95 | 130 | ±20 | 3 | 5.5 | 7 |  |
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| LWT1H407H5 | Single | TO-263 | N | 135 | 110 | 167 | ±20 | 3 | 5.5 | 7 | |
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| LWT1P4H6AM | Single | SOT-23 | N | 135 | 2 | 1.5 | ±20 | 2 | 165 | 200 |  |
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| LWT1H207A8 | Single | TO-220AB | N | 120 | 125 | 200 | ±20 | 1.8 | 6 | 7.5 | 6.5 | 8 | |
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| LWT1H207AD5 | Single | PDFN5*6-8L | N | 120 | 94 | 119 | ±20 | 1.8 | 6 | 7.5 | 6.5 | 8 | |
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| LWT1H207H8 | Single | TO-220AB | N | 120 | 125 | 227 | ±20 | 3 | 6 | 7.5 | |
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| LWT1H207H5 | Single | TO-263 | N | 120 | 125 | 227 | ±20 | 3 | 6 | 7.5 | |
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| LWT1H207HD5 | Single | PDFN5*6-8L | N | 120 | 94 | 119 | ±20 | 3 | 6 | 7.5 | |
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| LWT1H205H8 | Single | TO-220AB | N | 120 | 125 | 200 | ±20 | 3 | 4 | 5 | |
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| LWT1H205H5 | Single | TO-263 | N | 120 | 125 | 200 | ±20 | 3 | 4 | 5 | |
