语言选择SGT-MOS
乐瓦微SGT-MOS产品采用了具有电荷平衡功能的屏蔽栅深沟槽（Shield Gate Deep Trench）技术，全面提升了器件的开关特性和导通特性，同时降低了器件的特征导通电阻（ Rdson ）和栅极电荷（Qg），产品具有业内极低的FOM值（Rdson*Qg）。广泛应用于各种高频开关电源，BLDC控制，电池保护等市场。
N/P
VDSS (V)
Package
Configuration
| LW Product Name | Configuration | Package | N/P | VDSS (V) |
ID (A) |
Pd (W) |
VGS (V) |
Vth (Typ) |
Rdson(mΩ) @VGS10V Typ |
Rdson(mΩ) @VGS10V Max |
Rdson(mΩ) @VGS4.5V Typ |
Rdson(mΩ) @VGS4.5V Max |
Rdson(mΩ) @VGS2.5V Typ |
Rdson(mΩ) @VGS2.5V Max |
产品应用 | 规格书 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| *LWT1H203HX | Single | TOLL | N | 120 | 222 | 312 | ±20 | 3.3 | 2.35 | 3.2 |  |
|||||
| LWT1H202H5 | Single | TO-263 | N | 120 | 220 | 300 | ±20 | 3.3 | 1.6 | 2.2 | |
|||||
| *LWT1H202HX | Single | TOLL | N | 120 | 230 | 380 | ±20 | 3.3 | 1.6 | 2.1 | |
|||||
| LWT1H205H8 | Single | TO-220AB | N | 115 | 125 | 200 | ±20 | 3 | 4 | 4.8 | |
|||||
| LWT1H205HD5 | Single | PDFN5*6-8L | N | 115 | 125 | 160 | ±20 | 3 | 4 | 4.8 | |
|||||
| LWT1H205AD5 | Single | PDFN5*6-8L | N | 115 | 125 | 160 | ±20 | 1.8 | 3.9 | 5 | 5.5 | 6.5 | |
|||
| LWT1207AM | Single | SOT23 | N | 100 | ±20 | 1.8 | 85 | 105 | 100 | 130 | |
|||||
| LWT1206AM | Single | SOT23 | N | 100 | ±20 | 1.8 | 120 | 150 | 140 | 180 | |
|||||
| *LWT1H10AM | Single | SOT23 | N | 100 | 1 | 0.95 | ±12 | 1.5 | 370 | 450 | 420 | 550 | |
|||
| LWT1H11AM | Single | SOT23 | N | 100 | 2 | 1.25 | ±20 | 1.8 | 180 | 230 | |
