语言选择SGT-MOS
乐瓦微SGT-MOS产品采用了具有电荷平衡功能的屏蔽栅深沟槽（Shield Gate Deep Trench）技术，全面提升了器件的开关特性和导通特性，同时降低了器件的特征导通电阻（ Rdson ）和栅极电荷（Qg），产品具有业内极低的FOM值（Rdson*Qg）。广泛应用于各种高频开关电源，BLDC控制，电池保护等市场。
N/P
VDSS (V)
Package
Configuration
| LW Product Name | Configuration | Package | N/P | VDSS (V) |
ID (A) |
Pd (W) |
VGS (V) |
Vth (Typ) |
Rdson(mΩ) @VGS10V Typ |
Rdson(mΩ) @VGS10V Max |
Rdson(mΩ) @VGS4.5V Typ |
Rdson(mΩ) @VGS4.5V Max |
Rdson(mΩ) @VGS2.5V Typ |
Rdson(mΩ) @VGS2.5V Max |
产品应用 | 规格书 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| *LWT1H6AQ | Single | SOT-89 | N | 100 | 4 | 2 | ±20 | 1.8 | 100 | 120 | 120 | 145 |  |
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| *LWT1H6AM | Single | SOT23 | N | 100 | 4 | 1.5 | ±20 | 1.8 | 100 | 120 | 120 | 145 |  |
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| *LWT1H7AM | Single | SOT23 | N | 100 | 4.5 | 1.8 | ±20 | 1.8 | 60 | 75 | 80 | 100 | |
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| *LWT1H70AD3 | Single | PDFN3.3*3.3-8L | N | 100 | 15 | 31 | ±20 | 1.8 | 60 | 75 | 80 | 100 | |
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| *LWT1H70A4 | Single | TO-252 | N | 100 | 16 | 46 | ±20 | 1.8 | 61 | 75 | 80 | 91 | |
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| *LWT1H36AD3 | Single | PDFN3.3*3.3-8L | N | 100 | 23 | 35 | ±20 | 1.8 | 26 | 32 | 33 | 42 | |
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| *LWT1H36A4 | Single | TO-252 | N | 100 | 28 | 50 | ±20 | 1.8 | 26 | 32 | 33 | 42 | |
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| LWT1H24L4 | Single | TO-252 | N | 100 | 35 | 60 | ±12 | 1.2 | 17.5 | 22 | 19 | 25 | |
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| *LWT1H24AD5 | Single | PDFN5*6-8L | N | 100 | 32 | 50 | ±20 | 1.8 | 17 | 22 | |
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| *LWT1H24A4 | Single | TO-252 | N | 100 | 35 | 60 | ±20 | 1.8 | 17 | 22 | 20 | 25 | |
