语言选择SGT-MOS
乐瓦微SGT-MOS产品采用了具有电荷平衡功能的屏蔽栅深沟槽（Shield Gate Deep Trench）技术，全面提升了器件的开关特性和导通特性，同时降低了器件的特征导通电阻（ Rdson ）和栅极电荷（Qg），产品具有业内极低的FOM值（Rdson*Qg）。广泛应用于各种高频开关电源，BLDC控制，电池保护等市场。
N/P
VDSS (V)
Package
Configuration
| LW Product Name | Configuration | Package | N/P | VDSS (V) |
ID (A) |
Pd (W) |
VGS (V) |
Vth (Typ) |
Rdson(mΩ) @VGS10V Typ |
Rdson(mΩ) @VGS10V Max |
Rdson(mΩ) @VGS4.5V Typ |
Rdson(mΩ) @VGS4.5V Max |
Rdson(mΩ) @VGS2.5V Typ |
Rdson(mΩ) @VGS2.5V Max |
产品应用 | 规格书 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| *LWT1H04AD5 | Single | PDFN5*6-8L | N | 100 | 130 | 132 | ±20 | 1.8 | 3.4 | 4.1 | 4 | 6 |  |
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| *LWT1H04A8 | Single | TO-220AB | N | 100 | 145 | 208 | ±20 | 1.8 | 3.6 | 4.5 | 4.5 | 6 |  |
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| LWT1H03HD5 | Single | PDFN5*6-8L CLIP | N | 100 | 132 | ±20 | 3 | |
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| LWT1H022HX | Single | TOLL | N | 100 | 260 | 312 | ±20 | 3.5 | 1.8 | 2.2 | |
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| *LWT1H022H5 | Single | TO-263 | N | 100 | 215 | 271 | ±20 | 3.5 | 2.4 | 3.2 | |
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| *LWT1H022H8 | Single | TO-220AB | N | 100 | 200 | 227 | ±20 | 3.5 | 2.5 | 3.2 | |
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| *LWT1H02HB | Single | TO-263-7L | N | 100 | 255 | 250 | ±20 | 3 | 1.6 | 2.3 | |
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| *LWT1H02H8 | Single | TO-220AB | N | 100 | 253 | 250 | ±20 | 3.3 | 2 | 2.5 | |
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| *LWT1H02HK | Single | TO-247 | N | 100 | 308 | 347 | ±20 | 3.3 | 2 | 2.5 | |
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| *LWT1H02H5 | Single | TO-263 | N | 100 | 253 | 250 | ±20 | 3.3 | 2.1 | 2.5 | |
