语言选择SGT-MOS
乐瓦微SGT-MOS产品采用了具有电荷平衡功能的屏蔽栅深沟槽（Shield Gate Deep Trench）技术，全面提升了器件的开关特性和导通特性，同时降低了器件的特征导通电阻（ Rdson ）和栅极电荷（Qg），产品具有业内极低的FOM值（Rdson*Qg）。广泛应用于各种高频开关电源，BLDC控制，电池保护等市场。
N/P
VDSS (V)
Package
Configuration
| LW Product Name | Configuration | Package | N/P | VDSS (V) |
ID (A) |
Pd (W) |
VGS (V) |
Vth (Typ) |
Rdson(mΩ) @VGS10V Typ |
Rdson(mΩ) @VGS10V Max |
Rdson(mΩ) @VGS4.5V Typ |
Rdson(mΩ) @VGS4.5V Max |
Rdson(mΩ) @VGS2.5V Typ |
Rdson(mΩ) @VGS2.5V Max |
产品应用 | 规格书 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| LWT1H04A8 | Single | TO-220AB | N | 100 | 130 | 210 | ±20 | 1.8 | 3.6 | 4.5 | 4.5 | 6 |  |
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| LWT1H08H8 | Single | TO-220AB | N | 100 | 80 | 108 | ±20 | 3 | 7 | 8.5 | |
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| LWT1H08A8 | Single | TO-220AB | N | 100 | 80 | 108 | ±20 | 1.8 | 7 | 8.5 | 9 | 11 | |
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| LWT1H08H4 | Single | TO-252 | N | 100 | 80 | 105 | ±20 | 3 | 7 | 8.5 | |
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| LWT1H08AD5 | Single | PDFN5*6-8L | N | 100 | 70 | 79 | ±20 | 1.8 | 7 | 8.5 | 9 | 11 | |
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| LWT1H08A4 | Single | TO-252 | N | 100 | 80 | 105 | ±20 | 1.8 | 7 | 8.5 | 9 | 11 | |
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| LWT1H10H8 | Single | TO-220AB | N | 100 | 75 | 104 | ±20 | 3 | 8.5 | 10.5 | |
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| LWT1H10H5 | Single | TO-263 | N | 100 | 75 | 104 | ±20 | 3 | 8.5 | 10.5 | |
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| LWT1H10H4 | Single | TO-252 | N | 100 | 70 | 100 | ±20 | 3 | 8.5 | 10.5 | |
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| LWT1H10AS | Single | SOP8 | N | 100 | 11 | 2.8 | ±20 | 1.8 | 8.5 | 10.5 | 10 | 12.5 | |
