语言选择SGT-MOS
乐瓦微SGT-MOS产品采用了具有电荷平衡功能的屏蔽栅深沟槽（Shield Gate Deep Trench）技术，全面提升了器件的开关特性和导通特性，同时降低了器件的特征导通电阻（ Rdson ）和栅极电荷（Qg），产品具有业内极低的FOM值（Rdson*Qg）。广泛应用于各种高频开关电源，BLDC控制，电池保护等市场。
N/P
VDSS (V)
Package
Configuration
| LW Product Name | Configuration | Package | N/P | VDSS (V) |
ID (A) |
Pd (W) |
VGS (V) |
Vth (Typ) |
Rdson(mΩ) @VGS10V Typ |
Rdson(mΩ) @VGS10V Max |
Rdson(mΩ) @VGS4.5V Typ |
Rdson(mΩ) @VGS4.5V Max |
Rdson(mΩ) @VGS2.5V Typ |
Rdson(mΩ) @VGS2.5V Max |
产品应用 | 规格书 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| LWS6040A4 | Single | TO-252 | P | -60 | -35 | 90 | ±20 | -1.8 | 35 | 42 | 42 | 52 |  |
|||
| LWS6060AS | Single | SOP8 | P | -60 | -9 | 3.1 | ±20 | -1.8 | 45 | 55 | |
|||||
| LWS6060A4 | Single | TO-252 | P | -60 | -25 | 40 | ±20 | -1.8 | 45 | 55 | |
|||||
| LWS6080A4 | Single | TO-252 | P | -60 | -16 | 32 | ±20 | -1.65 | 60 | 75 | 75 | 100 |  |
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| LWS6080AS | Single | SOP8 | P | -60 | -8 | 3 | ±20 | -1.65 | 60 | 75 | 75 | 100 | |
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| LWT1H404HX | Single | TOLL | N | 135 | 226 | 368 | ±20 | 3.5 | 3 | 3.6 | |
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| LWT1H404H5 | Single | TO-263 | N | 135 | 180 | 250 | ±20 | 3.5 | 3 | 3.6 | |
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| LWT1H404H8 | Single | TO-220AB | N | 135 | 180 | 250 | ±20 | 3.5 | 3 | 3.6 | |
|||||
| LWT1H404HK | Single | TO-247 | N | 135 | 200 | 310 | ±20 | 3.5 | 3 | 3.6 | |
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| LWT1H407H8 | Single | TO-220AB | N | 135 | 110 | 167 | ±20 | 3 | 5.5 | 7 | |
