语言选择SGT-MOS
乐瓦微SGT-MOS产品采用了具有电荷平衡功能的屏蔽栅深沟槽（Shield Gate Deep Trench）技术，全面提升了器件的开关特性和导通特性，同时降低了器件的特征导通电阻（ Rdson ）和栅极电荷（Qg），产品具有业内极低的FOM值（Rdson*Qg）。广泛应用于各种高频开关电源，BLDC控制，电池保护等市场。
N/P
VDSS (V)
Package
Configuration
| LW Product Name | Configuration | Package | N/P | VDSS (V) |
ID (A) |
Pd (W) |
VGS (V) |
Vth (Typ) |
Rdson(mΩ) @VGS10V Typ |
Rdson(mΩ) @VGS10V Max |
Rdson(mΩ) @VGS4.5V Typ |
Rdson(mΩ) @VGS4.5V Max |
Rdson(mΩ) @VGS2.5V Typ |
Rdson(mΩ) @VGS2.5V Max |
产品应用 | 规格书 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| LWS6010H4 | Single | TO-252 | P | -60 | -80 | 150 | ±20 | -3 | 9 | 11 |  |
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| LWS6016A8 | Single | TO-220AB | P | -60 | -80 | 156 | ±20 | -1.8 | 12 | 16 | 16 | 20 | |
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| LWS6016AD5 | Single | PDFN5*6-8L | P | -60 | -60 | 114 | ±20 | -1.8 | 12 | 16 | 16 | 20 | |
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| LWS6016AS | Single | SOP8 | P | -60 | -12 | 3.5 | ±20 | -1.8 | 12 | 16 | 16 | 20 |  |
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| LWS6016A4 | Single | TO-252 | P | -60 | -60 | 114 | ±20 | -1.8 | 12 | 16 | 16 | 20 | |
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| LWS6028AS | Single | SOP8 | P | -60 | -12 | 3.5 | ±20 | -1.8 | 20 | 25 | 25 | 32 | |
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| LWS6028A4 | Single | TO-252 | P | -60 | -40 | 100 | ±20 | -1.8 | 20 | 25 | 25 | 32 | |
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| LWS6028A8 | Single | TO-220AB | P | -60 | -40 | 100 | ±20 | -1.8 | 20 | 25 | 25 | 32 | |
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| LWS6040AS | Single | SOP8 | P | -60 | -10 | 3.1 | ±20 | -1.8 | 35 | 42 | 42 | 52 | |
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| LWS6040AD3 | Single | PDFN3.3*3.3 | P | -60 | -19 | 32 | ±20 | -1.8 | 35 | 42 | 42 | 52 | |
