语言选择SGT-MOS
乐瓦微SGT-MOS产品采用了具有电荷平衡功能的屏蔽栅深沟槽（Shield Gate Deep Trench）技术，全面提升了器件的开关特性和导通特性，同时降低了器件的特征导通电阻（ Rdson ）和栅极电荷（Qg），产品具有业内极低的FOM值（Rdson*Qg）。广泛应用于各种高频开关电源，BLDC控制，电池保护等市场。
N/P
VDSS (V)
Package
Configuration
| LW Product Name | Configuration | Package | N/P | VDSS (V) |
ID (A) |
Pd (W) |
VGS (V) |
Vth (Typ) |
Rdson(mΩ) @VGS10V Typ |
Rdson(mΩ) @VGS10V Max |
Rdson(mΩ) @VGS4.5V Typ |
Rdson(mΩ) @VGS4.5V Max |
Rdson(mΩ) @VGS2.5V Typ |
Rdson(mΩ) @VGS2.5V Max |
产品应用 | 规格书 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| LWS6010A8 | Single | TO-220AB | P | -60 | -85 | 167 | ±20 | -1.8 | 9 | 11 | 12 | 16 |  |
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| LWS6008AD5 | Single | PDFN5*6-8L | P | -60 | -100 | 160 | ±20 | -2 | 5.5 | 7 | |
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| LWS6008A4 | Single | TO-252 | P | -60 | -100 | 160 | ±20 | -2 | 5.5 | 7 | |
|||||
| LWS6008A8 | Single | TO-220AB | P | -60 | -110 | 180 | ±20 | -2 | 5.5 | 7 | |
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| LWS1H45AD5 | Single | PDFN5*6-8L | P | -100 | -28 | 83 | ±20 | -2 | 45 | 55 | 55 | 65 |  |
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| LWS1H45A8 | Single | TO-220AB | P | -100 | -36 | 166 | ±20 | -2 | 45 | 55 | 55 | 65 | |
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| LWS1H45A4 | Single | TO-252 | P | -100 | -28 | 83 | ±20 | -2 | 45 | 55 | 55 | 65 | |
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| LWS6008A5 | Single | TO-263 | P | -60 | -110 | 180 | ±20 | -2 | 5.5 | 7 | |
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| LWS6010AD5 | Single | PDFN5*6-8L | P | -60 | -60 | 104 | ±20 | -1.8 | 9 | 11 | 12 | 16 | |
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| LWS6010A4 | Single | TO-252 | P | -60 | -80 | 150 | ±20 | -1.8 | 9 | 11 | 12 | 16 | |
