语言选择SGT-MOS
乐瓦微SGT-MOS产品采用了具有电荷平衡功能的屏蔽栅深沟槽（Shield Gate Deep Trench）技术，全面提升了器件的开关特性和导通特性，同时降低了器件的特征导通电阻（ Rdson ）和栅极电荷（Qg），产品具有业内极低的FOM值（Rdson*Qg）。广泛应用于各种高频开关电源，BLDC控制，电池保护等市场。
N/P
VDSS (V)
Package
Configuration
| LW Product Name | Configuration | Package | N/P | VDSS (V) |
ID (A) |
Pd (W) |
VGS (V) |
Vth (Typ) |
Rdson(mΩ) @VGS10V Typ |
Rdson(mΩ) @VGS10V Max |
Rdson(mΩ) @VGS4.5V Typ |
Rdson(mΩ) @VGS4.5V Max |
Rdson(mΩ) @VGS2.5V Typ |
Rdson(mΩ) @VGS2.5V Max |
产品应用 | 规格书 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| *LWS1H150AD3 | Single | PDFN3.3*3.3-8L | P | -100 | -12 | 40 | ±20 | -1.7 | 115 | 150 | 130 | 165 |  |
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| *LWS1H150A23 | Single | SOT-223 | P | -100 | -4 | 5 | ±20 | -1.7 | 115 | 150 | 130 | 165 | |
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| *LWS1H150A4 | Single | TO-252 | P | -100 | -14.5 | 50 | ±20 | -1.7 | 115 | 150 | 130 | 165 |  |
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| LWS1H150AS | Single | SOP-8 | P | -100 | -3 | 2.5 | ±20 | -1.7 | 115 | 150 | 130 | 165 | |
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| *LWS1H5AQ | Single | SOT-89 | P | -100 | -2.5 | 3 | ±20 | -1.8 | 140 | 260 | 170 | 320 | |
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| *LWS1H5AL | Single | SOT23-3L | P | -100 | -3 | 1.5 | ±20 | -1.8 | 140 | 200 | 170 | 250 | |
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| *LWS1H310AL | Single | SOT23-3L | P | -100 | -2 | 1.5 | ±20 | -1.7 | 253 | 380 | 300 | 430 | |
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| *LWS1H6AM | Single | SOT23 | P | -100 | -0.7 | 1 | ±20 | -1.7 | 800 | 900 | 900 | 1100 | |
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| *LWS1H7AM | Single | SOT23 | P | -100 | -1.3 | 1.39 | ±20 | -1.6 | 400 | 510 | 460 | 630 | |
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| LWS1H11AM | Single | SOT23 | P | -100 | -0.5 | 0.5 | ±20 | -1.5 | 1200 | 1600 | 1600 | 2000 | |
