语言选择SGT-MOS
乐瓦微SGT-MOS产品采用了具有电荷平衡功能的屏蔽栅深沟槽（Shield Gate Deep Trench）技术，全面提升了器件的开关特性和导通特性，同时降低了器件的特征导通电阻（ Rdson ）和栅极电荷（Qg），产品具有业内极低的FOM值（Rdson*Qg）。广泛应用于各种高频开关电源，BLDC控制，电池保护等市场。
N/P
VDSS (V)
Package
Configuration
| LW Product Name | Configuration | Package | N/P | VDSS (V) |
ID (A) |
Pd (W) |
VGS (V) |
Vth (Typ) |
Rdson(mΩ) @VGS10V Typ |
Rdson(mΩ) @VGS10V Max |
Rdson(mΩ) @VGS4.5V Typ |
Rdson(mΩ) @VGS4.5V Max |
Rdson(mΩ) @VGS2.5V Typ |
Rdson(mΩ) @VGS2.5V Max |
产品应用 | 规格书 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| *LWS60110A23 | Single | SOT-223 | P | -60 | -4 | 3 | ±20 | -1.6 | 90 | 110 | 110 | 150 |  |
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| *LWS6T7AM | Single | SOT23 | P | -60 | -2.5 | 1.5 | ±20 | -1.6 | 88 | 110 | 108 | 150 |  |
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| *LWS6T8AM | Single | SOT23 | P | -60 | -2 | 1.5 | ±20 | -1.5 | 128 | 155 | 169 | 210 | |
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| LWS6T9AL | Single | SOT23-3L | P | -60 | -0.62 | 0.5 | ±20 | -1.5 | 300 | 450 | 450 | 600 | |
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| *LWS6T10AM | Single | SOT23 | P | -60 | -0.3 | 0.35 | ±20 | -1.5 | 1500 | 2500 | 2000 | 4000 | |
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| LWS6T10AW | Single | SOT-323 | P | -60 | -0.26 | 0.27 | ±20 | -1.5 | 1500 | 2500 | 2000 | 4000 | |
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| LWS6T10AJ | Single | SOT-723 | P | -60 | -0.26 | 0.27 | ±20 | -1.5 | 1500 | 2500 | 2000 | 4000 | |
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| *LWS6T10AF | Single | SOT-523 | P | -60 | -0.26 | 0.27 | ±20 | -1.5 | 1500 | 2500 | 2000 | 4000 | |
|||
| *LWS4T025AB | Single | TO-263-7L | P | -40 | -300 | 379 | ±20 | -1.7 | 1.5 | 2 | 2 | 3 | |
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| LWS3004AD5 | Single | PDFN5*6-8L | P | -30 | 110 | 125 | ±20 | -1.5 | 3.4 | 4.5 | 5.2 | 7 | |
